bsc079n03s g opti mos ? 2 power-transistor features ? fast switching mosfet for smps ? optimized technology for notebook dc/dc converters ? qualified according to jedec 1) for target applications ? n-channel ? logic level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? superior thermal resistance ? avalanche rated ? pb-free plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 40 a t c =100 c 40 t a =25 c, r thja =45 k/w 2) 14.6 pulsed drain current i d,pulse t c =25 c 3) 160 avalanche energy, single pulse e as i d =40 a, r gs =25 ? 120 mj reverse diode d v /d t d v /d t i d =40 a, v ds =24 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v power dissipation p tot t c =25 c 60 w t a =25 c, r thja =45 k/w 2) 2.8 operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 value v ds 30 v r ds(on),max 7.9 m ? i d 40 a product summary type package ordering code marking bsc079n03s g p-tdson-8 q67042 s4290 079n03s p-tdson-8 p-tdson-8 rev. 1.01 page 1 2004-12-15
bsc079n03s g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 2.1 k/w thermal resistance, r thja minimal footprint - - 62 junction - ambient 6 cm 2 cooling area 2) --45 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 30 - - v gate threshold voltage v gs(th) v ds = v gs , i d =30 a 1.2 1.6 2 zero gate voltage drain current i dss v ds =30 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =30 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =40 a - 9.3 11.6 m ? v gs =10 v, i d =40 a - 6.6 7.9 gate resistance r g -1- ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =40 a 31 62 - s 1) j-std20 and jesd22 values 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 2) see figure 3 rev. 1.01 page 2 2004-12-15
bsc079n03s g parameter symbol conditions unit min. typ. max. d y namic characteristics input capacitance c iss - 1680 2230 pf output capacitance c oss - 600 800 reverse transfer capacitance c rss - 79 120 turn-on delay time t d(on) - 5.1 7.7 ns rise time t r - 4.2 6.3 turn-off delay time t d(off) -2131 fall time t f - 3.4 5.1 gate char g e characteristics 3) gate to source charge q gs - 5.3 7.0 nc gate charge at threshold q g(th) - 2.7 3.6 gate to drain charge q gd - 3.4 5.2 switching charge q sw - 6.0 8.6 gate charge total q g -1317 gate plateau voltage v plateau - 3.1 - v gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 5 v -1115nc output charge q oss v dd =15 v, v gs =0 v -1318 reverse diode diode continous forward current i s - - 40 a diode pulse current i s,pulse - - 160 diode forward voltage v sd v gs =0 v, i f =40 a, t j =25 c - 0.93 1.2 v reverse recovery charge q rr v r =15 v, i f = i s , d i f /d t =400 a/s - - 10 nc 3) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =15 v, f =1 mhz v dd =15 v, v gs =10 v, i d =20 a, r g =2.7 ? v dd =15 v, i d =20 a, v gs =0 to 5 v rev. 1.01 page 3 2004-12-15
bsc079n03s g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 0.1 1 10 100 1000 0.1 1 10 100 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 0.01 0.1 1 10 0 0 0 0 0 0 t p [s] z thjc [k/w] 0 10 20 30 40 50 60 70 0 40 80 120 160 t c [c] p tot [w] 0 10 20 30 40 50 0 40 80 120 160 t c [c] i d [a] rev. 1.01 page 4 2004-12-15
bsc079n03s g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 2.8 v 3 v 3.2 v 3.4 v 3.7 v 4 v 4.5 v 10 v 0 5 10 15 20 25 30 0 1020304050 i d [a] r ds(on) [m ? ] 25 c 150 c 0 10 20 30 40 50 60 70 80 012345 v gs [v] i d [a] 0 10 20 30 40 50 60 70 80 0 102030405060 i d [a] g fs [s] 2.8 v 3 v 3.2 v 3.4 v 3.7 v 4 v 4.5 v 10 v 0 10 20 30 40 50 60 70 80 0123 v ds [v] i d [a] rev. 1.01 page 5 2004-12-15
bsc079n03s g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =40 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 2 4 6 8 10 12 14 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 30 a 300 a 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 3 10 2 10 1 10 100 1000 10000 0102030 v ds [v] c [pf] 25 c 150 c 25 c, 98% 150 c, 98% 10 3 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 v sd [v] i f [a] rev. 1.01 page 6 2004-12-15
bsc079n03s g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =20 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 6 v 15 v 24 v 0 2 4 6 8 10 12 0 5 10 15 20 25 q gate [nc] v gs [v] 20 22 24 26 28 30 32 34 36 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 1 10 100 1 10 100 1000 t av [s] i av [a] rev. 1.01 page 7 2004-12-15
bsc079n03s g package outline p-tdson-8: outline footprint dimensions in mm rev. 1.01 page 8 2004-12-15
bsc079n03s g package outline p-tdson-8: tape dimensions in mm rev. 1.01 page 9 2004-12-15
bsc079n03s g published by infineon technologies ag bereich kommunikation st.-martin-stra?e 53 d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices, please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact your nearest infineon technologies office. infineon technologies' components may only be used in life-support devices or systems with the expressed written approval of infineon technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.01 page 10 2004-12-15
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